We report on the fabrication of Ti2AlN in this article. Thin films of the Mn+1AXn phase ( M: early transition metal; A: A-group element; X: C and/ or N; n=1-3) Ti2AlN were grown on Ti, Si and glass substrate from a Ti and Al compound target with an Ar/N2 gas mixture using DC MAGNETRON SPUTTERING system. X-ray diffraction and atomic force microscopy (AFM) were used to characterize the Ti2AlN (004) structure and morphology of the samples.

The study focused on the production of zinc oxide (ZnO) thin films as a dielectric material for use in metal– insulator– semiconductor capacitors. The objective of this study has demonstrated the frequency dependence of conductivity and capacity. Zinc oxide (ZnO) was thin films deposited by a silicon wavelength SPUTTERING\MAGNETRON cathode SPUTTERING. The capacitive properties of ZnO zinc oxide were studied at room temperature. The frequency dependence of the conductivity, capacitance and the measured current– voltage (I– V) characteristics of ZnO zinc oxide thin films were studied in the frequency range from 5 kHz to 13 MHz. It is shown that the conductivity is total. Indeed, the measurement of the conductivity in alternating regime obeys the Arrhenius equation. In addition, the measured I– V characteristics of the structures studied at 10 kHz and 10 MHz clearly revealed areas of accumulation, depletion and inversion in the plots. It has been observed that AC conductivity and capacity in the ZnO thin films (ZnO) are frequency dependent. This dependence indicates that the conduction is thermally activated and maintains the correlated barrier of the charge carrier on the localized states as a function of the experimental data. The FBAR (expand) devices with the ZnO films exhibited a pronounced resonance peak centered at 537 MHz with a k2 coupling coefficient of 7%. It found therefore that the impedance matching of the FBAR could be easily achieved simply by controlling the resonance the resonator.

In this research, the densification of magnesia nanopowder with a mean particle size of about 100 nm was investigated by spark plasma sintering undera pressures of 80 MPa and at temperature range from 1000 ° C to 1400 ° C and a heating rate of 50 ° C/min for 20 minutes. The density of the samples slowly increased with increasing sintering temperatures to 1200 ° C. Afterwards, with more increasing of temperature, decreasing density and increasing of grain growth were observed. Grain growth was analyzed during the sintering process with the classic grain growth theory. The results of the survey on the density showed that the highest densification rate occurred at 1100 ℃ . The activation energy of grain growth was Obtained 452. 24 kJ / mol. The MgO ceramic spark plasma sintered at 1200 ° C for 20 min demonstrated the highest infrared transmittance of 67 % at the 5. 6 μ m wavelength.

Physical properties of transparent and conducting indium tin oxide (ITO) thin films grown by radiofrequency (RF) MAGNETRON SPUTTERING are studied systematically by changing deposition time. The X-ray diffraction (XRD) data indicate polycrystalline thin films with grain orientations predominantly along the (2 2 2) and (4 0 0) directions. From atomic force microscopy (AFM) it is found that by increasing the deposition time, the roughness of the film increases. Scanning electron microscopy (SEM) images show a network of a high-porosity interconnected nanoparticles, which approximately have a pore size ranging between 20 and 30 nm. Optical measurements suggest an average transmission of 80 % for the ITO films. Sheet resistances are investigated using four-point probes, which imply that by increasing the film thickness the resistivities of the films decrease to 2.43 × 10-5  W cm.

The transition metal nitrides like titanium nitride exhibit very interesting color variation properties depending on the different plasma deposition conditions using cylindrical MAGNETRON SPUTTERING method. It is found in this deposition study that nitrogen partial pressure in the reactive gas discharge environment plays a significant role on the color variation of the film coatings on bell-metal which is commercially used for decorative as well as for a variety of industrial applications. UV-visible spectrophotometer spectra show that good film coatings has been deposited at argon: nitrogen gas partial pressure of 1: 1. Magnetic field and the deposition time also play an important role in the color variation of the deposited titanium nitride film.

In industrial applications, most materials are exposed to wear and friction because multiple conditions are used. However, the tribological properties of these materials can be improved with different techniques. One such technique that improves the frictional property of a surface is the use of self-lubricating coatings. In this study, multicomponent coatings of nominal composition Cu-Ni3Al-MoS2 have been sputter from the target using the best SPUTTERING condition to get a good morphology and microstructure of the coating. The morphology and micro structure of the coatings were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy depressive spectroscopy (EDS). The measured micro hardness of this coating was 380 HV under a load of 25 g. Tribological properties of Cu-Ni3Al-MoS2 coatings were investigated using ball-on-disk (BOD) tribometer at room temperature. These composite coatings showed a good morphology and adhesion of the coating to the substrate. Also, it had acceptable friction coefficient and higher wear resistance due to its hard matrix containing Cu-Ni3Al and MoS2 Nano particles.